Texas A&M In The News: Transistor Based On Electron's Spin

Transistor based on electron's spin

Researchers have successfully developed a realistic spin-field-effect transistor that is operable at high temperatures. The design is based on an electron’s spin.

“One of the major stumbling blocks was that to manipulate spin, one may also destroy it,” says Jairo Sinova, professor of physics at Texas A&M University. “It has only recently been realized that one could manipulate it without destroying it by choosing a particular set-up for the device and manipulating the material. One also has to detect it without destroying it, which we were able to do."

Full story at Futurity.